Investigation on Mn doping of Ge nanowires for spintronics
Autor: | Candido Pirri, Erwan Oliviero, Daniel Bouchier, J.L. Bubendorff, C. Gardès, Charles Renard, S. Hajjar, R. Boukhicha, Laetitia Vincent, Frédéric Fossard, Gilles Patriarche |
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Rok vydání: | 2014 |
Předmět: | |
Zdroj: | physica status solidi c. 11:315-319 |
ISSN: | 1610-1642 1862-6351 |
Popis: | Various approaches are described to synthesize Mn-doped Ge NWs using UHV-CVD growth via the VLS mechanism. We explored in-situ doping using an organo-metallic precursor (TCMn) and tested different catalyst seeds such as Au, Au-Mn or Ge-Mn. All in-situ attempts failed to incorporate Mn atoms into the NW. Moreover we observed that the use of TCMn and/or Au-Mn catalysts have a crippling effect on the growth kinetics. Finally, ex-situ doping with ion implantation is right now considered as a doping alternative. We report on preliminary results aiming at testing the radiation resistance of Ge NWs embedded in a removable silica matrix. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
Databáze: | OpenAIRE |
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