Influence of In-situ SiNx Interlayer on Strain Relief and Optical Character of GaN Epilayer Grown on 6H-SiC

Autor:	宋世巍 Song Shi-wei, 杜国同 Du Guo-tong, 梁红伟 Liang Hong-wei, 张克雄 Zhang Ke-xiong, 夏晓川 Xia Xiao-chuan, 柳阳 Liu Yang, 申人升 Shen Ren-sheng
Rok vydání:	2013
Předmět:	In situ Radiation Character (mathematics) Materials science Strain relief Composite material Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Chinese Journal of Luminescence. 34:1017-1021
ISSN:	1000-7032
DOI:	10.3788/fgxb20133408.1017
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54b083095826a8d444a6e2488d1f3442 https://doi.org/10.3788/fgxb20133408.1017 Zobrazit plný text záznamu