Increased upper critical field for nanocrystalline MoN thin films deposited on AlN buffered substrates at ambient temperature
| Autor: | L.S. Vaidhyanathan, E. P. Amaladass, D.K. Baisnab, R. Baskaran, A. V. Thanikai Arasu |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Silicon Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Sputter deposition Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Nanocrystalline material Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Molybdenum 0103 physical sciences Thin film 010306 general physics 0210 nano-technology Critical field Wurtzite crystal structure |
| Zdroj: | Journal of Physics D: Applied Physics. 49:205304 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/49/20/205304 |
| Popis: | Molybdenum nitride (MoN) thin films have been deposited using reactive DC magnetron sputtering on aluminum nitride buffered oxidized silicon substrates at ambient temperature. GIXRD of aluminum nitride (AlN) deposited under similar conditions has revealed the formation of wurtzite phase AlN. GIXRD characterization of molybdenum thin films deposited on AlN buffered oxidized silicon substrates has indicated the formation of nanocrystalline MoN thin films. The electrical resistivity measurements indicate MoN thin films have a superconducting transition temperature of ~8 K. The minimum transition width of the MoN thin film is 0.05 K at 0 T. The inferred upper critical field B c2(0) for these nanocrystalline MoN thin films obtained by fitting the temperature dependence of critical field with Werthamer, Helfand and Hohenberg theory lies in the range of 17–18 T which is the highest reported in literature for MoN thin films. |
| Databáze: | OpenAIRE |
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