Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect

Autor:	I.S. Lin, D. Chen, C.T. Tsai, G.S. Lin, M. Ma, V.C. Su, C.S. Yeh, James B. Kuo
Rok vydání:	2008
Předmět:	Materials science business.industry Electrical engineering Silicon on insulator Electronic Optical and Magnetic Materials Impact ionization Depletion region Ionization Shallow trench isolation MOSFET Optoelectronics Electrical and Electronic Engineering business NMOS logic Voltage
Zdroj:	IEEE Electron Device Letters. 29:612-614
ISSN:	1558-0563
DOI:	10.1109/led.2008.922971
Popis:	This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 mum due to the weaker function of the parasitic bipolar device, which is offset by the stronger impact ionization in the post-pinchoff region coming from the bandgap narrowing generated by the STI-induced mechanical stress.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54a7600ee8f0295005cd4ecc86ee1bcf https://doi.org/10.1109/led.2008.922971 Zobrazit plný text záznamu