Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
| Autor: | William E. McMahon, Emily L. Warren, Alan E. Kibbler, Ryan M. France, Andrew G. Norman, Robert C. Reedy, Jerry M. Olson, Adele C. Tamboli, Paul Stradins |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Carbon contamination Materials science Atmospheric oxygen Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Engineering physics Inorganic Chemistry 0103 physical sciences Materials Chemistry Analysis tools 0210 nano-technology Atmospheric contamination Vicinal |
| Zdroj: | Journal of Crystal Growth. 452:235-239 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.05.014 |
| Popis: | Direct growth of GaP on Si enables the integration of III–V and Si optoelectronic devices for a wide variety of applications, and has therefore been the subject of much research for many decades. Most of this effort has been directed toward overcoming the two main technical challenges: 1) removing atmospheric oxygen and carbon contamination and 2) establishing the conditions needed for “APD-free” III–V epitaxy ( i.e ., without antiphase domains). We have developed an OMVPE process for APD-free GaP growth on Si which overcomes both challenges by using AsH 3 to clean and prepare the Si surface in situ at a relatively low temperature. This process is based upon a very brief “AsH 3 -cleaning” step which simultaneously removes atmospheric contamination (thereby eliminating the need for Si regrowth) and creates a single-domain As-terminated Si surface. Here we discuss the key process steps using results from a suite of analysis tools. |
| Databáze: | OpenAIRE |
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