Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress
| Autor: | Takuya Saraya, Anil Kumar, Shinji Miyano, Toshiro Hiramoto |
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| Rok vydání: | 2013 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Fabrication Materials science Transistor High voltage Hardware_PERFORMANCEANDRELIABILITY Stability (probability) Electronic Optical and Magnetic Materials law.invention Stress (mechanics) law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Static random-access memory Electrical and Electronic Engineering Voltage |
| Zdroj: | IEICE Transactions on Electronics. :759-765 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e96.c.759 |
| Popis: | The self-improvement of static random access memory (SRAM) cell stability by post-fabrication high-voltage stress is experimentally demonstrated and its mechanism is analyzed using 4k device-matrixarray (DMA) SRAM test element group (TEG). It is shown that the stability of unbalance cells is automatically improved by merely applying stress voltage to the VDD terminal of SRAM. It is newly found that |VTH| of the OFF-state pFETs in the SRAM cell is selectively lowered which improves the cell stability and contributes to the self-improvement. key words: transistor, MOSFET, variability, off-state stress |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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