Isolation and optoelectronic characterization of Si solar cells microstructure defects
| Autor: | Lubomir Skvarenina, Adam Gajdoš, Pavel Škarvada, R. Macku, Nikola Papez, Dinara Sobola |
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| Rok vydání: | 2018 |
| Předmět: |
History
Materials science business.industry Electroluminescence Microstructure Focused ion beam Computer Science Applications Education Characterization (materials science) law.invention Optical microscope law Solar cell Optoelectronics Near-field scanning optical microscope business Microscale chemistry |
| Zdroj: | Journal of Physics: Conference Series. 1124:041009 |
| ISSN: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/1124/4/041009 |
| Popis: | This research article presents results of silicon solar cell defects optoelectronic characterization based on several experimental methods. These microstructure defects have their origin mainly in the production process, but also can be caused by mechanical stress. However, some defect related spots emit light when the cell is reverse biased. Therefore, electroluminescence (EL) method is used for macroscopic localization and scanning near-field optical microscopy (SNOM) combined with photomultiplier tube in order to scan topography of defective area in microscale. Moreover, elemental analysis of the defects related spots provided by energy-dispersive X-ray spectroscopy (EDX) is presented as well. Besides that, focused ion beam (FIB) was used to isolate the defective spots by 2 µm wide and 2 µm deep barrier. Isolation pattern around the defect is avoiding leakage current flow through it. Since leakage current does not flow through defect, solar cell parameters in reverse conditions are improved. |
| Databáze: | OpenAIRE |
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