Tera‐hertz GaAs metal‐semiconductor‐metal photodetectors with 25 nm finger spacing and finger width

Autor:	Paul B. Fischer, Y. Liu, Stephen Y. Chou
Rok vydání:	1992
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Direct current Photodetector Capacitance Particle detector Full width at half maximum Optics Optoelectronics business Current density Molecular beam epitaxy Dark current
Zdroj:	Applied Physics Letters. 61:477-479
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.107862
Popis:	We have fabricated metal‐semiconductor‐metal (MSM) photodetectors with the smallest finger spacing and finger width of 25 nm on molecular beam epitaxy grown GaAs. Direct current measurement shows that they have low dark current and high sensitivity. Monte Carlo simulations demonstrate that for a MSM photodetector with 25 nm finger spacing and width, the full width at half maximum impulse response is as short as 0.25 ps and the 3 dB bandwidth is 0.4 THz. They also show that by eliminating holes, the bandwidth can be over 1.8 THz. Furthermore, the detector capacitance was calculated, indicating that by reducing the ratio of finger width to finger spacing the detector capacitance can be decreased.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5472fd4eef3633f8481d84f984443837 https://doi.org/10.1063/1.107862 Zobrazit plný text záznamu