Fabrication and Electrical and Optical Properties of Nitrogen-doped In-Sn-Zn Oxide Thin-film Transistors

Autor:	吕英波 Lyu Ying-bo, 宋淑梅 Song Shu-mei, 赵继凤 Zhao Ji-feng, 杨田林 Yang Tian-lin, 李治玥 Li Zhi-yue, 杨波波 Yang Bo-bo, 王昆仑 Wang Kun-lun, 辛艳青 Xin Yan-qing
Rok vydání:	2017
Předmět:	chemistry.chemical_compound Radiation Materials science Fabrication chemistry business.industry Thin-film transistor Oxide Optoelectronics Nitrogen doped Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Chinese Journal of Luminescence. 38:1622-1628
ISSN:	1000-7032
DOI:	10.3788/fgxb20173812.1622
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::546e9cbf0141718c15da9bd432a6f967 https://doi.org/10.3788/fgxb20173812.1622 Zobrazit plný text záznamu