A 0.1-V 5-GHz VCO Achieving FoM of 190-dBc/Hz
| Autor: | Jun-De Jin, Ying-Ta Lu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Transistor dBc 02 engineering and technology Inductor law.invention Voltage-controlled oscillator CMOS law Booster (electric power) Logic gate 0202 electrical engineering electronic engineering information engineering Optoelectronics business Voltage |
| Zdroj: | 2019 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2019.8700785 |
| Popis: | Today, sub-0.1 V and sub-0.1 mW VCO is not available mainly due to inductor/transistor limitations. Here, the designed 5-GHz VCO using the proposed L/Q-booster demonstrated a P DC of 0.051 mW, and achieved a FoM of 190 dBc/Hz at 0.1 V supply voltage. The VCO can operate even down to 0.05 V under a P DC of 0.036 mW. The proposed booster not only enhances the inductor Q by more than 10×, but also L by 2× to save chip area. As a result, a VCO core area of 0.047 mm2 was achieved by using 16-nm CMOS FinFET technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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