Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric
| Autor: | M. Kerber, W. Xiong, Joe W. McPherson, G.S. Haase, E.T. Ogawa, T. Pompl, K. Schrufer, T. Schulz, Homi C. Mogul, R. Cleavelin |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Gate dielectric Electrical engineering chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Dielectric CMOS chemistry Hardware_GENERAL MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Breakdown voltage Hardware_ARITHMETICANDLOGICSTRUCTURES business Metal gate Tin Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | 2006 IEEE International Reliability Physics Symposium Proceedings. |
| DOI: | 10.1109/relphy.2006.251309 |
| Popis: | Future CMOS technology generations may implement multi-gate architectures according to S. M. Kim et al. (2004), D Ha et al. (2004), S.-Y. Kim et al. (2005), W.-S. Liao et al. (2005), S. Maeda et al. (2004), N. Collaert et al. (2005),and C. Jahan et al. (2005), together with a change from SiO2-based to high-k gate dielectrics and a change from poly-silicon to metal gate. The purpose of this work is to identify the influences of multi-gate architecture and metal gate on gate dielectric reliability and to demonstrate the dielectric reliability trend along the road map towards a CMOS process using triple gate architecture, metal gate, and HfSiON gate dielectric |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|