Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS 2 thin film transistor
| Autor: | Young Ki Hong, Yeong Hwan Ko, Hoyoung Tang, Wongeon Song, Yong-wan Jin, Jeong Il Park, Jong Won Chung, Jiyoul Lee, Chulseung Jung, Sunkook Kim, Min Hyung Lee, Jongsun Park, Bang Lin Lee, Sang Yoon Lee, Jae Su Yu |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Transistor Nanotechnology Hardware_PERFORMANCEANDRELIABILITY General Chemistry Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention PMOS logic Biomaterials Noise margin CMOS Thin-film transistor law Logic gate Hardware_INTEGRATEDCIRCUITS Materials Chemistry Optoelectronics Inverter Electrical and Electronic Engineering business NMOS logic Hardware_LOGICDESIGN |
| Zdroj: | Organic Electronics. 15:3038-3042 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2014.08.003 |
| Popis: | We report a novel platform on which we design a flexible high-performance complementary metal–oxide–semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS 2 ) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS 2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications. |
| Databáze: | OpenAIRE |
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