| Autor: |
E. Chikoidze, Philippe Bove, Curtis P. Irvine, Ferechteh H. Teherani, Yves Dumont, David J. Rogers, Eric V. Sandana, Cuong Ton-That, Muhammad Zakria, Matthew R. Phillips, Thanh Tung Huynh |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Oxide-based Materials and Devices XII. |
| DOI: |
10.1117/12.2585041 |
| Popis: |
We report the characteristics of luminescence bands in beta-Ga2O3 thin films and single crystals. The dominant UV emission at 3.4 eV exhibits strong thermal quenching but its peak shape remains unchanged. The blue and green bands, attributed to defects, are found to be strongly dependent on growth conditions. Additionally, we observe a distinct red luminescence at 1.9 eV upon hydrogen doping. The emergence of this emission is accompanied by substantially increased electrical conductivity. The red emission is shown to be consistent with shallow donor–deep acceptor pair recombination and will be discussed in the context of defect models. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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