Effect of growth conditions on microstructure of sputtered precursor for CuIn1-xGaxSe2 (CIGS) absorber layer deposited on stainless steel substrates
| Autor: | A. Wall, Steve Rozeveld, J. Kerbleski, N. Shinkel, Scott Sprague, Melissa Mushrush, C. Alvey, M. Behr, Madan Kumar Sharma, C. Wintland, T. Hasan |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Metals and Alloys Oxide 02 engineering and technology Surfaces and Interfaces Substrate (electronics) 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Copper indium gallium selenide solar cells Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering 0103 physical sciences Materials Chemistry Thin film 0210 nano-technology Layer (electronics) Stoichiometry Deposition (law) |
| Zdroj: | Thin Solid Films. 665:36-45 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2018.08.045 |
| Popis: | In this paper, we report the effect of growth conditions on the properties of sputtered precursor thin films for CuIn1-xGaxSe2 (CIGS) absorber layers. Specifically, precursor films containing Cu, In, Ga, and Se were deposited via co-sputtering on flexible Mo-coated stainless steel substrates over a wide range of compositions and deposition conditions. The impact on precursor film phase, morphology, and elemental distribution was investigated as a function of precursor Se content, substrate temperature, target type (CIG/CIG vs. In/Cu3Ga), and Na content. Precursor films selenized at high temperature (>500 °C) to form stoichiometric CIGS and completed using a CdS n-type buffer layer and transparent conducting oxide window layers exhibited full-cell efficiencies as high as 11.5%. |
| Databáze: | OpenAIRE |
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