| Autor: |
Petr S. Smertenko, G. A. Sukach, Pavel F. Oleksenko, A. B. Bogoslovskaya, A. M. Evstigneev |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
This article describes the charge injection into porous silicon structures fabricated by electrochemical technique on 20 Ohm cm p-type silicon. The I-V characteristics, photoluminescence spectra and lifetime kinetics studied at temperatures 77 K, 293 K and 373 K. Measurements show that the photoluminescence in porous silicon layers results from the recombination of electrons and holes captured in the potential wells of various depth and shapes; its intensity is controlled by the nonradiative recombination on the wires boundaries. The charge flow in the system Au(Al)-porSi-Si-Al results from the charge transfer in the system metal -- thin insulator -- semiconductor. The current is not restricted by the conductivity of insulating layers; it is restricted by the generation processes in the regions of space charge and semiconductor/insulator interface due to large amount of defects with various ionization energies. Potential barriers on the surface of porous silicon are formed due to surface defects on the interface silicon wire/oxide; their generation tends to shift the surface potential to the intrinsic value.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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