Intrinsic recombination coefficients in quantum well semiconductor lasers

Autor:	Carmen S. Menoni, P. Thiagarajan, Henryk Temkin, G. Y. Robinson, J.M. Pikal
Rok vydání:	2003
Předmět:	Materials science business.industry Carrier lifetime Rate equation Laser law.invention Semiconductor laser theory Laser diode rate equations Quantum dot laser law Optoelectronics Spontaneous emission business Quantum well
Zdroj:	1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).
DOI:	10.1109/leos.1999.811900
Popis:	We show that it is possible to extract the intrinsic well lifetime and therefore the intrinsic recombination parameters from the measured carrier lifetime and spontaneous emission spectra of an InAsP-InGaAsP MQW laser. This method is based on a small signal solution to the rate equations for QW lasers which includes separate carrier levels for both the QW and barrier/SCH regions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5438fedea8ba0199d716666707e8da0e https://doi.org/10.1109/leos.1999.811900 Zobrazit plný text záznamu