Hydrogen etching of the SiC(0001) surface at moderate temperature
| Autor: | Kazuma Yagyu, Takayuki Suzuki, Takashi Nishida, Toshiya Hamasaki, Hiroshi Tochihara, Hisashi Mitani |
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| Rok vydání: | 2021 |
| Předmět: |
Surface (mathematics)
Materials science Flat surface Graphene Process Chemistry and Technology Moderate temperature Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Etching (microfabrication) law Materials Chemistry Wafer Electrical and Electronic Engineering Hydrogen etching Composite material Instrumentation Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology B. 39:052801 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/6.0001147 |
| Popis: | Hydrogen etching of a 4H-SiC(0001) surface at a moderate temperature of 1200 °C with molecular hydrogen gas was investigated to obtain enough flat and clean surface for large-scale high-quality epitaxial graphene synthesis. We found after a prolonged hydrogen etching that micro scratches, large depressions, and contaminations produced on the wafer in the manufacturing process disappeared and that a periodic array of atomic steps appeared, maintaining initial flat surface morphology. One hour of etching with a flow of 1.0 l/min was the optimum condition to obtain a flat and clean SiC surface in the present study. Using such surfaces, we were able to synthesize the so-called zero layer graphene by thermal annealing in ultrahigh vacuum. |
| Databáze: | OpenAIRE |
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