Improving The Barrier Properties of Nickel. Chrome and Nichrome Films on Silicon

Autor:	Ronald S. Nowicki, Chris Rau, David W. Harris, Scott M. Baumann, Ahmad Motamedi, Louie Arias
Rok vydání:	1993
Předmět:	Nickel Fabrication Materials science Diffusion barrier Silicon chemistry Metallurgy chemistry.chemical_element Nichrome Electroplating Sheet resistance Overlayer
Zdroj:	MRS Proceedings. 303
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-303-375
Popis:	A new technique for improving the diffusion barrier properties of thin, thermallyevaporated nickel, chromium and nichrome films on silicon is described. In this technique, known as “Rapid Thermal Annealing” (RTA), profound differences in the diffusion barrier properties of the films annealed in ammonia ambient at 550-750°C, in comparison to films annealed only in vacuum, were observed. The films annealed in ammonia retained their integrity while the films annealed in vacuum showed diffusion of the silicon into the metal overlayer throughout the entire thickness of the metal in some cases. The film sheet resistance increase for the latter was consistent with the formation of the metal silicide. The possibility of extending this technique to electroplated films used in integrated and hybrid device fabrication is being studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::542a94d9a9acb81aa6b36e24d1d5a343 https://doi.org/10.1557/proc-303-375 Zobrazit plný text záznamu Full text from SpringerLink