Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices
| Autor: | D. Lipp, Y. Raffel, A. Jayakumar, R. Olivo, R. Pfuetzner, R. Illgen, A. Muehlhoff, Jan Hoentschel, L. Pirro, Michael Otto, O. Zimmerhackl, Alban Zaka, Konrad Seidel |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Surface (mathematics) Materials science Silicon business.industry Noise reduction Transistor chemistry.chemical_element 01 natural sciences Noise (electronics) law.invention Reliability (semiconductor) chemistry law Logic gate 0103 physical sciences Optoelectronics business Communication channel |
| Zdroj: | IRPS |
| Popis: | In this work buried channel devices were successfully integrated in HKMG. Analog, noise and reliability performance have been reported and compared to a surface device. The devices were processed to have the same V Tsat for the nominal geometry of a corresponding surface device. Advantages and drawbacks of the two integrations are discussed and explained with the support of calibrated TCAD simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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