Characterization of nanostructured HfO2 films using RBS and PAC

Autor:	M. R. Gomes, Luis Redondo, J.C. Soares, N.P. Barradas, L. F. D. Pereira, M. S. Costa, N. Franco, F. H. M. Cavalcante, D. A. Rossetto, Eduardo Alves, Armandina M. L. Lopes, Artur W. Carbonari
Rok vydání:	2012
Předmět:	Nuclear and High Energy Physics Materials science Silicon Doping Analytical chemistry chemistry.chemical_element Nanoparticle Rutherford backscattering spectrometry Electron beam physical vapor deposition chemistry Thin film Instrumentation Hyperfine structure Neutron activation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 273:195-198
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2011.07.074
Popis:	The hyperfine field at 181Ta lattice sites in a nanostructured HfO2 thin film doped with Fe was studied using Rutherford Backscattering Spectrometry and Perturbed Angular Correlation techniques. The 409 nm Hf film was deposited by Electron Beam Evaporation on a silicon substrate. The radioactive 181Hf ions were produced by neutron activation of the nanofilm in the Brazilian Research Reactor (IPEN IEA-R1) by the reaction 180Hf(n,γ)181Hf. These studies provided an excellent opportunity to obtain unique information regarding local arrangement of the grains, structure, phase transformations of nanoparticles and interfaces of nanostructured materials and the thin film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::540d3562dd54b34b9e365ba21fd26cfc https://doi.org/10.1016/j.nimb.2011.07.074 Zobrazit plný text záznamu Full Text from ScienceDirect