Structural characterization of GaAs grown at low temperatures by molecular beam epitaxy

Autor: R J Matyi, D L Miller, M R Melloch, K Zhang
Rok vydání: 1995
Předmět:
Zdroj: Journal of Physics D: Applied Physics. 28:A139-A143
ISSN: 1361-6463
0022-3727
DOI: 10.1088/0022-3727/28/4a/027
Popis: High-resolution X-ray diffraction methods have been used to characterize the structural characteristics of GaAs grown by molecular beam epitaxy at low substrate temperatures. Triple-crystal X-ray diffraction scans demonstrate that, as the As4/Ga incorporation ratio was increased, there occurred increases in the magnitude of diffuse scattering as well as an anisotropy in the scattering. A degradation of the crystal truncation rod is also observed. Differences have also been observed in the diffuse scattering from n- and p-doped GaAs samples grown in this way; we attribute this to changes in the kinetics of arsenic incorporation due to the electrical characteristics of the material. Analysis of the annealed GaAs layers has shown the development of long-range strain fields from distortions generated by the growth of the arsenic precipitates. The diffuse scattering has been used to develop estimates of the average size of the arsenic precipitates.
Databáze: OpenAIRE