Structural characterization of GaAs grown at low temperatures by molecular beam epitaxy
Autor: | R J Matyi, D L Miller, M R Melloch, K Zhang |
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Rok vydání: | 1995 |
Předmět: |
Diffraction
Materials science Acoustics and Ultrasonics Annealing (metallurgy) Scattering Kinetics Analytical chemistry chemistry.chemical_element Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Crystallography Diffuse scattering chemistry Anisotropy Arsenic Molecular beam epitaxy |
Zdroj: | Journal of Physics D: Applied Physics. 28:A139-A143 |
ISSN: | 1361-6463 0022-3727 |
DOI: | 10.1088/0022-3727/28/4a/027 |
Popis: | High-resolution X-ray diffraction methods have been used to characterize the structural characteristics of GaAs grown by molecular beam epitaxy at low substrate temperatures. Triple-crystal X-ray diffraction scans demonstrate that, as the As4/Ga incorporation ratio was increased, there occurred increases in the magnitude of diffuse scattering as well as an anisotropy in the scattering. A degradation of the crystal truncation rod is also observed. Differences have also been observed in the diffuse scattering from n- and p-doped GaAs samples grown in this way; we attribute this to changes in the kinetics of arsenic incorporation due to the electrical characteristics of the material. Analysis of the annealed GaAs layers has shown the development of long-range strain fields from distortions generated by the growth of the arsenic precipitates. The diffuse scattering has been used to develop estimates of the average size of the arsenic precipitates. |
Databáze: | OpenAIRE |
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