Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs
| Autor: | En Xia Zhang, Chundong Liang, Robert A. Reed, Kan Li, Steven J. Koester, Kaitlyn L. Ryder, Michael L. Alles, Andrew L. Sternberg, Daniel M. Fleetwood, Yang Su, Huiqi Gong, Rui Ma, Ronald D. Schrimpf, Pan Wang |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
Nuclear and High Energy Physics 010308 nuclear & particles physics Transistor Overdrive voltage Laser 01 natural sciences Black phosphorus law.invention Amplitude Nuclear Energy and Engineering law Logic gate 0103 physical sciences MOSFET Electrical and Electronic Engineering Atomic physics Drain current |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:384-388 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2018.2877412 |
| Popis: | Laser-induced single-event transients (SETs) are observed in black phosphorus (BP) MOSFETs. The SETs are relatively small, which is consistent with expectations for thin-film fully depleted transistors. The position dependence and the bias-dependence of the measured SETs in BP transistors are investigated to study the charge collection mechanisms. The peak drain current is maximized when the pulsed-laser strikes at the center of the channel region. The amplitudes of the SETs are also relatively independent of the overdrive voltage. The drain-to-source SET current increases when $\vert \text {V}_{\mathrm {DS}}\vert $ increases, due to a shunt effect. |
| Databáze: | OpenAIRE |
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