Epitaxial growth with impurity dimer deposition
| Autor: | Sang B. Lee, Taegwen Hwangbo |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Statistics and Probability
Coalescence (physics) Materials science Dimer Monte Carlo method Nucleation Rate equation Condensed Matter Physics Molecular physics chemistry.chemical_compound Monomer chemistry Impurity Condensed Matter::Strongly Correlated Electrons Statistical physics Molecular beam epitaxy |
| Zdroj: | Physica A: Statistical Mechanics and its Applications. 337:470-480 |
| ISSN: | 0378-4371 |
| DOI: | 10.1016/j.physa.2004.02.003 |
| Popis: | We investigate an influence of impurity dimers on the profile of monomer and island densities and the dynamic scaling of island size distributions when small amount of dimers are deposited with the flux of monomers in epitaxial growth. The rate equations are solved numerically using the fourth-order Runge–Kutta algorithm. The computer simulations are also carried out for various dimer rates and for various growth models. We find that the density profile of islands displays five distinct regions, i.e., the deposition-dominated region I (DDR-I), the competing region in which dimer-deposition competes with nucleation, the intermediate region, the DDR-II, and finally the coalescence region. Monte Carlo data exhibit fairly good agreements with the rate equation predictions of the point–island model up to DDR-II. With negligibly small rate of dimers, the dynamic scaling function of the island size distributions appears to vary considerably, implying that impurity dimers alter significantly the growth mechanism. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect