Optical discrimination of threading dislocations in 4H-SiC epitaxial layer by phase-contrast microscopy
| Autor: | Ryuichi Sugie, Kazutsugu Murakami, Ryo Hattori, Osamu Oku, Masaaki Kuzuhara |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Polarized light microscopy Photoluminescence Materials science business.industry General Engineering General Physics and Astronomy 02 engineering and technology Edge (geometry) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Etching (microfabrication) 0103 physical sciences Microscopy Threading (manufacturing) Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Applied Physics Express. 11:075501 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | The superior nondestructive distinguishability of threading screw dislocations and threading edge dislocations in SiC epitaxial layers by phase-contrast microscopy using our optical system was demonstrated by comparing our experimental results with those obtained by conventional polarized light microscopy, photoluminescence topography, and KOH etching. It was confirmed that phase-contrast microscopy was more effective than polarized light microscopy in terms of the nondestructive discrimination of threading dislocations. |
| Databáze: | OpenAIRE |
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