| Autor: |
M. Celik, Michel Haond, R. Sampson, S. Kanakasabapathy, Balasubramanian S. Pranatharthi Haran, L. Grenouillet, Scott Luning, T. Skotnicki, Walter Kleemeier, Pierre Morin, Shom Ponoth, S. Guillaumet, Chanemougame Daniel, R. Johnson, J. L. Bataillon, T. Levin, Olivier Weber, Ali Khakifirooz, James Chingwei Li, Romain Wacquez, H. Kothari, Gen Tsutsui, Frederic Allibert, Lisa F. Edge, Kangguo Cheng, Mukesh Khare, Swati Mehta, Nicolas Loubet, Emmanuel Josse, M. Vinet, Huiming Bu, F. Chafik, J. Gimbert, Toshiharu Nagumo, Y. Le Tiec, Qing Liu, Bruce B. Doris, O. Faynot, J. Kuss |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE International Electron Devices Meeting. |
| Popis: |
We report, for the first time, high performance Ultra-thin Body and Box (UTBB) FDSOI devices with a gate length (LG) of 20nm and BOX thickness (TBOX) of 25nm, featuring dual channel FETs (Si channel NFET and compressively strained SiGe channel PFET). Competitive effective current (Ieff) reaches 630μA/μm and 670μA/μm for NFET and PFET, respectively, at off current (Ioff) of 100nA/μm and Vdd of 0.9V. Excellent electrostatics is obtained, demonstrating the scalability of these devices to14nm and beyond. Very low AVt (1.3mV·μm) of channel SiGe (cSiGe) PFET devices is reported for the first time. BTI was improved >20% vs a comparable bulk device and evidence of continued scalability beyond 14nm is provided. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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