Simple measurement of carrier induced refractive-index change in InGaAsP pin ridge waveguide structures

Autor:	Lothar Dipl.-Phys. Stoll, G. Schraud, Ulrich Dipl.-Phys. Wolff, Gustav Müller
Rok vydání:	1991
Předmět:	SIMPLE (dark matter experiment) Materials science Ridge waveguides business.industry Band gap Gallium arsenide Interferometry chemistry.chemical_compound Optics chemistry Plasma effect Electrical and Electronic Engineering business Refractive index Shrinkage
Zdroj:	Electronics Letters. 27:297
ISSN:	0013-5194
DOI:	10.1049/el:19910187
Popis:	The carrier induced refractive-index change Δn in integrated InGaAsP 1.30 μm interferometer structures is evaluated by 1.55 μm transmission measurements. At carrier concentration N from 8×10 16 /cm 3 to 3×10 18 /cm 3 a value of Δn/N=-1×10 -20 cm 3 is obtained. A good agreement of the experimental results with theoretical predictions on bandfilling, plasma effect and bandgap shrinkage is demonstrated
Databáze:	OpenAIRE
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