The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
| Autor: | Krishna C. Saraswat, Arunanshu M. Roy, J.-Y. Jason Lin |
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| Rok vydání: | 2012 |
| Předmět: |
Work (thermodynamics)
Materials science Condensed matter physics Schottky barrier Fermi level Contact resistance chemistry.chemical_element Germanium Electrical contacts Electronic Optical and Magnetic Materials symbols.namesake chemistry Electrical resistivity and conductivity symbols Electrical and Electronic Engineering Quantum tunnelling |
| Zdroj: | IEEE Electron Device Letters. 33:761-763 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2012.2191386 |
| Popis: | Recent experiments have demonstrated a reduction of Fermi-level pinning in contacts to n-type Ge by the insertion of a thin tunnel barrier at the interface. The presence of fixed charge in these interface layers can contribute to Schottky-barrier reduction. This work theoretically studies the effect of tunnel-barrier fixed charge on the specific contact resistivity. By simulating various tunnel-barrier materials and fixed-charge densities, we estimate the magnitude of fixed charge required for this mechanism to play an important role in Fermi-level unpinning. |
| Databáze: | OpenAIRE |
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