Structure formation at the nanometric scale during current oscillations at the Si/electrolyte contact

Autor:	J. Grzanna, H. J. Lewerenz, Thilo Notz, Thomas Stempel
Rok vydání:	2010
Předmět:	Silicon Condensed matter physics Chemistry Differential equation Oxide chemistry.chemical_element Nanotechnology Electrolyte Condensed Matter Physics Integral equation Stress (mechanics) chemistry.chemical_compound Nanopore Silicon oxide
Zdroj:	physica status solidi c. 8:1734-1738
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201000030
Popis:	The oxide structure formation process at the Si/electrolyte contact is considered during the anodic oxidation of n-type silicon in fluoride containing solution. The morphological model is characterized by stress, cracks, nanopores and assumes two types of silicon oxide with different nanopore density which induces synchronization and leads to temporarily extended current oscillations. The Thickness Oscillator Model in a macroscopic and microscopic form is presented. For the macroscopic version a relation between the used integral equation (recurrence relation for the synchronization states) and the Helmholtz differential equation is presented in the case of sustained oscillations. Measurements and the microscopic model in the form of a spatio-temporarily resolved two-dimensional cellular automate visualize the oxide structure during current oscillations (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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