Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition
| Autor: | James G. Neff, Russell D. Dupuis, C. J. Pinzone |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Photoluminescence
Chemistry Analytical chemistry Heterojunction Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Inorganic Chemistry Condensed Matter::Materials Science Materials Chemistry Atomic layer epitaxy Metalorganic vapour phase epitaxy Quantum well Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 124:558-564 |
| ISSN: | 0022-0248 |
| Popis: | We report here the low-pressure metalorganic chemical vapor deposition growth of AlGaAs-GaAs quantum well heterostructures having low-temperature (4.2 K) photoluminescence spectra with full width at half-maximum (FWHM) values ranging from ≌6 to 4 meV for quantum wells having 6–28 monolayer (ML) widths, respectively. These linewidths are compared to those measured for quantum wells grown by molecular beam epitaxy, flow-rate modulation epitaxy, and atomic layer epitaxy. We find that the FWHM values for the thinnest quantum wells grown in the present study (≌6 ML) are equal to or narrower than those observed for comparable structures produced by other technologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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