Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
| Autor: | 陈林森 Chen Lin-sen, 石震武 Shi Zhen-wu, 陈晨 Chen Chen, 徐超 Xu Chao, 霍大云 Huo Da-yun, 邓长威 Deng Chang-wei, 王文新 Wang Wen-xin, 彭长四 Peng Chang-si |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Radiation Materials science Doping Metallurgy chemistry.chemical_element 02 engineering and technology Nitride 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry 0103 physical sciences Beryllium 0210 nano-technology |
| Zdroj: | Chinese Journal of Luminescence. 38:1056-1062 |
| ISSN: | 1000-7032 |
| DOI: | 10.3788/fgxb20173808.1056 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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