Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide
| Autor: | Dani Hak, Ansheng Liu, Haisheng Rong, Mario J. Paniccia, Remus Nicolaescu, Oded Cohen |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Silicon photonics Physics and Astronomy (miscellaneous) business.industry Laser pumping Waveguide (optics) symbols.namesake Optics X-ray Raman scattering symbols Optoelectronics Rayleigh scattering Free carrier absorption business Absorption (electromagnetic radiation) Raman scattering |
| Zdroj: | Applied Physics Letters. 85:2196-2198 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1794862 |
| Popis: | We fabricated a low-loss (∼0.22dB∕cm) rib waveguide (WG) in silicon-on-insulator with a small effective core area of ∼1.57μm2 and measured the stimulated Raman scattering gain in the WG. We obtained 2.3dB Raman gain in a 4.8-cm-long S-shaped WG using a 1455nm pump laser with a cw power of 0.9W measured before the WG. In addition, we observed nonlinear dependence of Raman gain and optical propagation loss as a function of the pump power. Our study shows that this mainly is due to two-photon absorption (TPA) induced free carrier absorption in the silicon WG. We experimentally determined the TPA induced free carrier lifetime of 25ns, which agrees well with our modeling. |
| Databáze: | OpenAIRE |
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