Low-temperature silicon oxidation using oxidizing radicals produced by catalytic decomposition of H2O/H2 on heated tungsten wire
| Autor: | Kazuya Fukushima, Yūki Katamune, Shinichi Tahara, Takanobu Negi, Akira Izumi |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Radical Inorganic chemistry General Engineering Oxide General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Atmospheric temperature range Tungsten 021001 nanoscience & nanotechnology 01 natural sciences Atmosphere chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy 0103 physical sciences Oxidizing agent 0210 nano-technology Catalytic decomposition |
| Zdroj: | Japanese Journal of Applied Physics. 57:120301 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | The surface oxidization of Si(100) substrates by oxidizing species generated by the catalytic decomposition of H2O precursors on a heated tungsten wire in a mixed H2O/H2 gas atmosphere was investigated. The formation of Si oxide layers was realized at stage temperatures of not more than 350 °C. From X-ray photoelectron spectroscopy measurements, their thicknesses were estimated to be 1–2 nm. In the tungsten wire temperature range from 1000 to 1450 °C, the oxidation of the wire was suppressed at H2O/H2 ratios of not more than 0.2%, which hardly caused tungsten contamination of the oxide layers. |
| Databáze: | OpenAIRE |
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