| Autor: |
Dai Yuehua, Chen Jun-ning, Sun Jia-e, Ke Dao-Ming, Hao Xu-Chun |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
2008 4th International Conference on Wireless Communications, Networking and Mobile Computing. |
| DOI: |
10.1109/wicom.2008.428 |
| Popis: |
The reason that existing models have underestimated the parasitic resistance of nano-scale MOSFET biased at low gate voltage was discussed. Then an improved resistance model was proposed. Finally, the influences of several technical parameters on the parasitic resistance were analyzed through numerical simulation, and some directions and measures might be taken to reduce the parasitic resistance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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