Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. I. The choice of the insulator and deposition
| Autor: | G. D. Bagratishvili, D. Jishiashvili, R. B. Dzhanelidze |
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| Rok vydání: | 1983 |
| Předmět: |
Materials science
Silicon business.industry Inorganic chemistry chemistry.chemical_element Germanium Nitride Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Sputtering Optoelectronics Microelectronics Thin film business Germanium nitride |
| Zdroj: | Physica Status Solidi (a). 78:115-123 |
| ISSN: | 1521-396X 0031-8965 |
| DOI: | 10.1002/pssa.2210780113 |
| Popis: | A qualitative model of the electronic interaction at the insulator–semiconductor interface is proposed. On the basis of this model a sequence of electron-donor ability of the oxygen and nitrogen atoms in oxides and nitrides of the silicon subgroup is established which makes it possible to choose an insulator for a high-quality IS interface. A low-temperature method of obtaining thin films of nonstoichiometric germanium oxynitrides is described based on reactive sputtering of germanium in hydrazine plasma preceded by a low-temperature in situ etching of a semiconductor surface. [Russian Text Ignored]. |
| Databáze: | OpenAIRE |
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