Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions

Autor:	H. Schreiber, K. S. Sreeharsha, W. L. Feldmann, K. J. Bachmann, E. G. Spencer, W. R. Sinclair, G. Pasteur, F. A. Thiel, P. H. Schmidt
Rok vydání:	1979
Předmět:	business.industry Inorganic chemistry General Physics and Astronomy chemistry.chemical_element Sputter deposition Solar energy Gallium arsenide law.invention Indium tin oxide chemistry.chemical_compound chemistry Sputtering law Solar cell Indium phosphide Optoelectronics business Indium
Zdroj:	Journal of Applied Physics. 50:3441-3446
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.326337
Popis:	The preparation of indium‐tin‐oxide (ITO)/p‐InP and ITO/p‐GaAs solar cells via ion‐beam deposition, rf sputtering, and magnetron sputtering of ITO onto single‐crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p‐GaAs and ITO/p‐InP solar cells are ?5 and ?14.4%, respectively.
Databáze:	OpenAIRE
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