| Autor: |
Kuan-Ting Chen, Yun-Fang Chung, Shu-Tong Chang, Cheng-Hsien Yang |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO). |
| DOI: |
10.1109/nano47656.2020.9183414 |
| Popis: |
This work analyzes the compact band model from tight-binding (TB) method and carrier mobility in few-layer black phosphorous (BP) metal-insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrodinger equations are self consistently solved using the compact band model to study the Γ band structure of few-layer BP from first principle method. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the impurity scattering are analyzed. A good agreement with the experimental results presented in the literature is achieved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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