Depth resolved preferential orientation of Cu(In,Ga)Se2 thin films based on the 112 peak model

Autor:	Tomasz Drobiazg, Nicolas Barreau, Pawel Zabierowski, Ludovic Arzel
Rok vydání:	2015
Předmět:	Diffraction Materials science Analytical chemistry chemistry.chemical_element One-Step law.invention Crystallography chemistry law X-ray crystallography Gallium Thin film Crystallization Absorption (electromagnetic radiation) Indium
Zdroj:	2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
DOI:	10.1109/pvsc.2015.7356102
Popis:	X-ray diffraction is a commonly used technique to characterize the Cu(In,Ga)Se2 thin films. It allows to derive information on the pureness of deposited layers, their preferential orientation and a degree of crystallization. In this work we present a detailed analysis of the shape of a very characteristic 112 peak and its dependence on the compositional profile of indium and gallium. Contrary to standard X-ray analysis we go one step further and from the comparison of calculated and measured 112 peaks we are able to determine the evolution of preferential orientation along the thickness of Cu(In,Ga)Se2 thin film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5380ae0b2d69ce77e402405ac0abcd4d https://doi.org/10.1109/pvsc.2015.7356102 Zobrazit plný text záznamu