SEM-based methodology for root cause analysis of wafer edge and bevel defects

Autor:	Ronnie Porat, Kfir Dotan, Shirley Hemar, Lior Levin, Ken Li, George Sung, Chen-Ting Lin, Sheng-Kuo Lin, Hsin-I Wang
Rok vydání:	2008
Předmět:	Wafer-scale integration Materials science business.industry Material analysis Semiconductor materials Optoelectronics Optical polymers Nanotechnology Wafer Edge (geometry) business Root cause analysis Bevel
Zdroj:	2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
Popis:	Monitoring detectivity of the wafer edge, bevel and apex - the areas beyond the pattern - is becoming increasingly important in the yield enhancement efforts of high-end fabs. In this paper we present a methodology for root cause analysis of edge and bevel defects, based on inline SEM review and EDX-based material analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::537bbe531b2b32813548cc6e45dd5ae5 https://doi.org/10.1109/asmc.2008.4528998 Zobrazit plný text záznamu