| Autor: |
Jong Woo Lee, Hyoun Woo Kim, Jeong Whan Han, Mok Soon Kim, Byung Don Yoo, M.H. Kim, C.H. Lee, Cheol Ho Lim, Sun Keun Hwang, C. Lee, D.J. Chung, S.G. Park, S.G. Lee, B.H. O, J. Kim, S.P. Chang, S.H. Lee, Seung Yong Chai, Wan In Lee, S.E. Park, K. Kim, D.K. Choi, C.W. Chung |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. 555:113-118 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.555.113 |
| Popis: |
We present a study of the photoresist (PR) etching and the low-k materials damage using a ferrite-core inductively coupled plasma (ICP) etcher, in order to develop an etching process for the low-k dielectric devices. We reveal that the N2/O2 flow ratio and bias power affected the PR etching rate. By Fourier transform infrared spectroscopy and HF dipping test, we investigated the effect of the gas flow ratio and bias power on the amount of etching damage to the low-k material. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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