Copper contamination effects in 0.5 μm BiCMOS technology
| Autor: | J. Kirtsch, Alain Chantre, Jean Palleau, F. Braud, J. Torres, T. Gravier |
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| Rok vydání: | 1997 |
| Předmět: |
Interconnection
Fabrication Materials science Diffusion barrier business.industry chemistry.chemical_element Integrated circuit Condensed Matter Physics Electromigration Copper Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention CMOS chemistry law Forensic engineering Optoelectronics Electrical and Electronic Engineering Tin business |
| Zdroj: | Microelectronic Engineering. 33:211-216 |
| ISSN: | 0167-9317 |
| Popis: | Copper is attracting increasing interest as a material for interconnections in future high speed ULSI circuits because of its low electrical resisivity and high electromigration performance [1]. Obviously, copper metallization has entered the stage of application in future ULSI fabrication [2]. However, the possibility of using for as long as possible the same processing equipments for the fabrication of circuits with either the standard Al-based or new copper metallization could be a major issue for circuit manufacturers. CMOS and bipolar test-circuits were used to detect the effects of Cu cross-contamination that could occur in equipment used for the fabrication of both Al-based and Cu interconnections. This paper describes the effects of such a contamination for typical thermal annealings used during backend processing. The diffusion barrier ability of a thin TiN film deposited at the backside of the Si substrate is also demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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