Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives
| Autor: | Donghyung Lee, Jae Jeong Kim, Seunghoe Choe, Myung Jun Kim, Won Gu Cho, Hoe Chul Kim, Il Gyu Jung, Ji Yoon Cho |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
chemistry.chemical_classification
Materials science Silicon Renewable Energy Sustainability and the Environment Inorganic chemistry chemistry.chemical_element Polymer Condensed Matter Physics Microstructure Surfaces Coatings and Films Electronic Optical and Magnetic Materials Adsorption Leveler chemistry Selective adsorption Materials Chemistry Electrochemistry Amine gas treating Deposition (law) |
| Zdroj: | Journal of The Electrochemical Society. 162:D109-D114 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/2.0561503jes |
| Popis: | The chemically synthesized suppressor and leveler are added together with bis(3-sulfopropyl)disulfide (SPS) to galvanostatically fill up the trenches with the similar dimensions to those of the through silicon vias. In our previous study, the deposition of the coarse-grained Cu was indicated as a drawback of the synthesized additives, i.e., polyoxy polymer with amine terminal groups and pyridine derivatives containing additional amine groups. In this study, the modified chemistry of organic additives is used, enabling the bottom-up filling of trenches and improving the microstructure of the deposited Cu. The conversion of the functional groups from amine to hydroxyl groups in both the suppressor and leveler, and the uniform adsorption of modified suppressor improved the microstructure of the deposited Cu. The void-free trench filling is induced by the selective adsorption and accumulation of SPS at the bottom and negligible deposition on the top and side-walls of the trenches. Based on the filling mechanism, the trenches with 9 μm width and 50 μm depth are galvanostatically filled in ≤20 min. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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