Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis

Autor:	Wojciech Knap, Frederic Boeuf, Raúl Rengel, Yahya Moubarak Meziani, R. Tauk, Tomas Gonzalez, T. Skotnicki, Jerzy Łusakowski, M. J. Martı́n Martinez
Rok vydání:	2007
Předmět:	Electron mobility Electron density Materials science Condensed matter physics Magnetoresistance Ballistic conduction Monte Carlo method MOSFET General Physics and Astronomy Field-effect transistor Transmission coefficient Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Zdroj:	Journal of Applied Physics. 101:114511
ISSN:	1089-7550 0021-8979
Popis:	Room temperature electron mobility (μ) in nanometer Si metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate length (LG) down to 30 nm was determined by the magnetoresistance method. A decrease of μ with the decrease of LG was observed. Monte Carlo simulations of electron transport in nanometer MOSFETs were carried out for realistic devices as a function of LG. The dependence with LG and electron concentration of simulated mobility and transmission coefficient agree with experimental data. An analysis of scattering events and time of flight gives evidence of the presence of ballistic motion in the investigated structures and proves its influence on mobility degradation in short transistors. The results give arguments that interpretation of the magnetoresistance coefficient as the square of the mobility is valid also in the case of quasiballistic electron transport.
Databáze:	OpenAIRE
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