| Autor: |
Erika R. Crandall, Chin-Che Tin, Suwan P. Mendis, Tamara Isaacs-Smith, Michelle T. Tin |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :837-840 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.717-720.837 |
| Popis: |
An electroless nickel film contains 5-14% by weight of phosphorus. Because of the presence of such a high concentration of phosphorus, electroless nickel can be a useful and convenient source of phosphorus dopant in the fabrication of n-type ohmic contacts for SiC. This paper describes the successful deposition of a Ni:P layer on 4H-SiC through electroless nickel plating followed by a discussion of the results of surface science and electrical measurements. Specific contact resistivity on lightly-doped samples with carrier concentration of 2.5 ´ 1016 cm-3 has been found to be about 4.8 ´ 10-6 Ωcm2 without any need for ion implantation. This metallization technique is especially useful in broad area ohmic contact formation on the back of n-type SiC substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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