The applications of nonlinear dynamic admittance in nanostructures
| Autor: | T C Au Yeung, Xuean Zhao |
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| Rok vydání: | 2001 |
| Předmět: |
Admittance
Acoustics and Ultrasonics Condensed matter physics Chemistry Condensed Matter Physics Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Tunnel effect Nonlinear system Density of states Physics::Accelerator Physics Thermal emittance Charge carrier Quantum tunnelling |
| Zdroj: | Journal of Physics D: Applied Physics. 34:1032-1036 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/34/7/302 |
| Popis: | Motivated by applications of second-order nonlinear capacitances in semiconductor measurements of charge carrier densities, we investigate the profound relationship between the second-order nonlinear emittance and the total and partial local densities of states for tunnelling transport in nanoscale systems with ac bias. We have derived an explicit formula for the second-order nonlinear emittance in the case of low frequencies. The difference between the emittance and capacitance in actual measurements is elaborated; and we show that the total density of states completely determine the second-order nonlinear emittance. Our study indicates that the second-order nonlinear emittance equals the second-order nonlinear electrochemical capacitance when there is no tunnelling current and the density of states is macroscopic. Also, in the quantum regime, the second-order emittance does not vanish even if the pure geometric capacitance equals zero. Based on our results, we present an application of the second-order nonlinear emittance in nanoscale systems. |
| Databáze: | OpenAIRE |
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