Epitaxial Cr on n-SrTiO3(001)—An ideal Ohmic contact

Autor:	C. Capan, M. E. Bowden, Scott A. Chambers, G. Y. Sun
Rok vydání:	2012
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Band gap Fermi level Oxide Crystal growth Epitaxy chemistry.chemical_compound symbols.namesake Transition metal chemistry symbols Ohmic contact Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 100:052106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3680608
Popis:	Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.
Databáze:	OpenAIRE
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