Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits
| Autor: | Thomas N. Jackson, Kaige G. Sun, Yuanyuan V. Li, J. I. Ramirez |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Transistor Subthreshold slope Electronic Optical and Magnetic Materials law.invention Threshold voltage Atomic layer deposition law Thin-film transistor Low-power electronics Optoelectronics Electrical and Electronic Engineering business Low voltage Electronic circuit |
| Zdroj: | IEEE Electron Device Letters. 34:891-893 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2013.2263193 |
| Popis: | In this letter, we report double-gate ZnO thin-film transistor (TFT) circuits deposited by plasma-enhanced atomic layer deposition that are suitable for low-voltage operation. Compared to bottom-gate-only ZnO TFTs, double-gate ZnO TFTs have improved mobility, subthreshold slope, and bias stability. In this letter, the TFT top gate is used to adjust the bottom-gate turn-on and threshold voltage. This allows the logic transition point for circuits to be adjusted for operation at a low voltage. Using this approach, high-gain inverters (gain >100) and low-voltage ring oscillators using double-gate TFTs have been demonstrated. Double-gate inverters with a beta ratio of 5 have a gain larger than 100. Fifteen-stage double-gate ZnO TFT ring oscillators operate with VDD = 1.5 V, ID = 28 μA, and propagation delay of 2 μs per stage. |
| Databáze: | OpenAIRE |
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