Autor: |
Yu-Chuan Chiu, Jia-Lin Huang, Yu-Han Chen, Kai-Jhih Gan, Dun-Bao Ruan, Chih-Chieh Hsu, Po-Tsun Liu |
Rok vydání: |
2022 |
Zdroj: |
Conference on Lasers and Electro-Optics. |
DOI: |
10.1364/cleo_at.2022.aw1d.7 |
Popis: |
Amorphous InZnO material is chosen for a phototransistor sensing layer, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1720 A/W) and good signal to noise ratio (~103) under the low blue light illumination. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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