High Responsivity Amorphous Indium Zinc Oxide Photo Sensor For In-cell Fingerprint Identification

Autor: Yu-Chuan Chiu, Jia-Lin Huang, Yu-Han Chen, Kai-Jhih Gan, Dun-Bao Ruan, Chih-Chieh Hsu, Po-Tsun Liu
Rok vydání: 2022
Zdroj: Conference on Lasers and Electro-Optics.
DOI: 10.1364/cleo_at.2022.aw1d.7
Popis: Amorphous InZnO material is chosen for a phototransistor sensing layer, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1720 A/W) and good signal to noise ratio (~103) under the low blue light illumination.
Databáze: OpenAIRE