A single event latchup suppression technique for COTS CMOS ICs
| Autor: | Steven C. Moss, R.C. Lacoe, J.C. Pickel, Stephen LaLumondiere, J.P. Spratt, R.E. Leadon |
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| Rok vydání: | 2003 |
| Předmět: |
Nuclear and High Energy Physics
Hardware_MEMORYSTRUCTURES Materials science business.industry Bipolar junction transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Single event latchup equipment and supplies Chip Displacement (vector) Integrated injection logic Nuclear Energy and Engineering CMOS Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Nuclear Science. 50:2219-2224 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2003.821607 |
| Popis: | Results are presented on technique using displacement damage from energetic ions to suppress single event latchup in commercial off-the-shelf (COTS) CMOS integrated circuits. Ions implanted through the back of a thinned chip degrade the parasitic bipolar transistors causing latchup without degrading chip functionality or the parametrics of the chip. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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