The Impact of Polysilicon Gate Doping on the Low Frequency Noise of MOS Transistors

Autor:	Eleftherios G. Ioannidis, Friedrich P. Leisenberger, Karl Rohracher, Rainer Minixhofer
Rok vydání:	2022
Předmět:	General Mathematics Hardware_INTEGRATEDCIRCUITS General Physics and Astronomy Hardware_PERFORMANCEANDRELIABILITY Hardware_LOGICDESIGN
Zdroj:	Fluctuation and Noise Letters. 21
ISSN:	1793-6780 0219-4775
Popis:	New results are presented for the low frequency noise (LFN) characterization of N-MOS and P-MOS from a standard CMOS technology node. The impact of n[Formula: see text] and p[Formula: see text] polysilicon gate doping on the LFN for N-MOS and P-MOS devices has been investigated. The results demonstrate that the higher p[Formula: see text] poly doping of the P-MOS improves the noise performance up to a factor of six. The N-MOS device with higher n[Formula: see text] poly doping shows no significant change in the LFN level. It is interesting to note that the effective Coulomb scattering prefactor [Formula: see text] increased for both devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::532b3594e72701624ac9a8392b6c260b https://doi.org/10.1142/s0219477522500286 Zobrazit plný text záznamu