| Popis: |
\indent The diffusion of dopants in silicon at high temperatures is modeled by a nonlinear parabolic system of partial differential equations on a two-dimensional region with a moving boundary. A numerical solution using the L-stable TRBDF2 time integration method and a ``box method'''' spatial discretization is described. Details are given of the methods used to specify and manipulate curves, and to define arbitrary simply connected regions by their boundary curves. Numerical experiments are presented comparing the divided difference and TR/TR methods for dynamically adjusting the timestep, and comparing Newton and Newton-Richardson iteration. |
